Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing-Reference-Cited by-同舟云学术

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Published:2014-01-09 Issue:2 Volume:7 Page:021301
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Fisicaro Giuseppe,Pelaz Lourdes,Aboy Maria,Lopez Pedro,Italia Markus,Huet Karim,Cristiano Filadelfo,Essa Zahi,Yang Qui,Bedel-Pereira Elena,Quillec Maurice,La Magna Antonino

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=2/a=021301/pdf

Reference16 articles.

1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

2. The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

3. Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing

4. Defect kinetics and dopant activation in submicrosecond laser thermal processes

5. Anomalous Impurity Segregation and Local Bonding Fluctuation inl-Si

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