High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=4/a=044102/pdf
Reference22 articles.
1. Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-$\mu{\rm m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({\rm NH}_{4})_{2}{\rm S}_{x}$ Treatment
2. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
3. High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier
4. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
5. 12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation
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