Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate-Reference-Cited by-同舟云学术

Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

Published:2014-04-01 Issue:4 Volume:7 Page:041202
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Lin Yueh-Chin,Huang Mao-Lin,Chen Chen-Yu,Chen Meng-Ku,Lin Hung-Ta,Tsai Pang-Yan,Lin Chun-Hsiung,Chang Hui-Cheng,Lee Tze-Liang,Lo Chia-Chiung,Jang Syun-Ming,Diaz Carlos H.,Hwang He-Yong,Sun Yuan-Chen,Chang Edward Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=4/a=041202/pdf

Reference23 articles.

1. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

2. InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

3. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

4. Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

5. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

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