Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=3/a=035505/pdf
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1. Characteristics of Semiconductor Alloy GaAs1-xBix
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4. Composition dependence of photoluminescence of GaAs1−xBix alloys
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1. Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer;Applied Physics A;2024-06-26
2. Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature;Materials Science in Semiconductor Processing;2024-01
3. Wavelength extended InGaAsBi near infrared photodetector;J INFRARED MILLIM W;2023
4. InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy;Materials Research Express;2021-02-01
5. Dilute Bismuthides on InP Substrates: From Materials to Devices;Bismuth-Containing Alloys and Nanostructures;2019
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