Chemical-state-selective X-ray absorption spectroscopy by detecting bond-specific Auger electrons for SiO2/SiC interface-Reference-Cited by-同舟云学术

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Chemical-state-selective X-ray absorption spectroscopy by detecting bond-specific Auger electrons for SiO2/SiC interface

Published:2017-07-03 Issue:8 Volume:56 Page:081301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Isomura Noritake,Murai Takaaki,Oji Hiroshi,Nomoto Toyokazu,Watanabe Yukihiko,Kimoto Yasuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=8/a=081301/pdf

Reference22 articles.

1. Application of cross-correlation to quantitative analysis of binary mixtures using extended x-ray absorption fine structure

2. The First and Second Shell Correlation Analysis in Cu Metal by the Matched EXAFS PDF Projection Method

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1. Atomic and electronic properties of different types of SiC/SiO2 interfaces: First-principles calculations;Surfaces and Interfaces;2022-10

2. Recent Applications of X-ray Absorption Spectroscopy in Combination with High Energy Resolution Fluorescence Detection;Chemistry Letters;2021-05-05

3. Current Status of BL6N1 of AichiSR: a Tender X-ray Beamline for XAFS and Photoemission Spectroscopy;Journal of Surface Analysis;2020

4. Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation;AIP Advances;2019-10

5. X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen;Japanese Journal of Applied Physics;2018-05-08

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