Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Published:2015-02-23 Issue:3 Volume:8 Page:032103
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Muziol Grzegorz,Turski Henryk,Siekacz Marcin,Wolny Pawel,Grzanka Szymon,Grzanka Ewa,Perlin Piotr,Skierbiszewski Czeslaw

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=3/a=032103/pdf

Reference24 articles.

1. Beam quality of blue InGaN laser for projection

2. The potential of III-nitride laser diodes for solid-state lighting

3. InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

4. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

5. InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

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1. Light emission at reverse voltage in a wide-well (In,Ga)N/GaN light-emitting diode;Physical Review Applied;2024-05-15

2. Grading waveguide to improve the performance of ultraviolet laser diodes;Journal of Luminescence;2023-11

3. The critical impact of the waveguide thickness on the optical and threshold behaviors of InGaN-based green laser diodes;Optik;2023-10

4. Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well‐Mechanism Leading to Electric Field Screening and Lasing;Advanced Physics Research;2023-04-12

5. Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy;Optical Materials Express;2023-04-05

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