Field-effect modulation of resistance in VO2thin film at lower temperature-Reference-Cited by-同舟云学术

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Field-effect modulation of resistance in VO2thin film at lower temperature

Published:2014-10-21 Issue:11 Volume:53 Page:111102
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Belyaev Maksim A.,Putrolaynen Vadim V.,Velichko Andrey A.,Stefanovich Genrikh B.,Pergament Alexander L.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=11/a=111102/pdf

Reference37 articles.

1. Electronics Below 10 nm

2. Embracing the quantum limit in silicon computing

3. Oxide Electronics Emerge

4. Oxide Nanoelectronics on Demand

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1. Effect of SiO₂ buffer layer on phase transition properties of VO₂ films fabricated by low-pressure chemical vapor deposition;Journal of Vacuum Science & Technology A;2022-12

2. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives;Nanomaterials;2021-01-28

3. Massively Strained VO2 Thin Film Growth on RuO2;Crystal Growth & Design;2020-03-04

4. Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching;Physical Chemistry Chemical Physics;2020

5. A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows;Nanomaterials;2019-12-25

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