High-performance, micromachined GaN-on-Si high-electron-mobility transistor with backside diamondlike carbon/titanium heat-dissipation layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=1/a=011001/pdf
Reference9 articles.
1. Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure
2. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
3. Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs
4. Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
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1. Systematic Investigations on the Thermal Management Performance of Graphite Thin Films for High-Electron-Mobility Transistors;IEEE Transactions on Electron Devices;2022-12
2. Application of aluminum flat heat pipe for dry cooling near the hot spot of a radar array with a multiscale structure;Applied Thermal Engineering;2020-03
3. Thermal analysis of GaN-on-SiC HEMTs with different backside via layouts;Japanese Journal of Applied Physics;2019-05-28
4. Al2O3-Dielectric In0.18Al0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure;IEEE Journal of the Electron Devices Society;2018
5. Investigations on the nanostructures of GaN, InN and InxGa1−xN;Materials Science in Semiconductor Processing;2016-07
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