1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors withfT/fmaxof 41/125 GHz-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors withfT/fmaxof 41/125 GHz

Published:2017-06-07 Issue:7 Volume:10 Page:076501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Hou Bin,Ma Xiaohua,Yang Ling,Zhu Jiejie,Zhu Qing,Chen Lixiang,Mi Minhan,Zhang Hengshuang,Zhang Meng,Zhang Peng,Zhou Xiaowei,Hao Yue

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=7/a=076501/pdf

Reference29 articles.

1. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

2. GaN transistors on Si for switching and high-frequency applications

3. Recent progress of GaN power devices for automotive applications

4. 0.1- $\mu \text{m}$ Atomic Layer Deposition Al₂O₃ Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

5. Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TiO₂ insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT;Japanese Journal of Applied Physics;2022-07-22

2. High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an f T/f max over 100 GHz/200 GHz*;Chinese Physics B;2021-08-01

3. Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors;Journal of Physics D: Applied Physics;2020-10-23

4. Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments*;Chinese Physics B;2020-10-01

5. In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT*;Chinese Physics B;2020-04-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3