Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors-Reference-Cited by-同舟云学术

Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors

Published:2017-01-13 Issue:2 Volume:10 Page:024102
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Takahashi Tsuyoshi,Kawano Yoichi,Makiyama Kozo,Shiba Shoichi,Sato Masaru,Nakasha Yasuhiro,Hara Naoki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=2/a=024102/pdf

Reference28 articles.

1. Demonstration of 20-Gbps wireless data transmission at 300 GHz for KIOSK instant data downloading applications with InP MMICs

2. 300-GHz Amplifier in 75-nm InP HEMT Technology

3. Low-Frequency Noise and Passive Imaging With 670 GHz HEMT Low-Noise Amplifiers

4. 94-GHz Band High-Gain and Low-Noise Amplifier Using InP-HEMTs for Passive Millimeter Wave Imager

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