Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates-Reference-Cited by-同舟云学术

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Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates

Published:2016-01-21 Issue:2 Volume:9 Page:021003
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Nepal Neeraj,Katzer D. Scott,Meyer David J.,Downey Brian P.,Wheeler Virginia D.,Storm David F.,Hardy Matthew T.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=2/a=021003/pdf

Reference22 articles.

1. Operation of Tunnel‐Emission Devices

2. Hot-carrier triodes with thin-film metal base

3. Current prospects for the permeable base transistor

4. Study of the electrical characteristics of the permeable base transistor high frequency response

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1. Epitaxial AlBN/β‐Nb₂N Ferroelectric/Superconductor Heterostructures;physica status solidi (RRL) – Rapid Research Letters;2024-07-25

2. Growth windows of epitaxial NbNx films on c -plane sapphire and their structural and superconducting properties;Physical Review Materials;2023-07-14

3. Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates;Journal of Vacuum Science & Technology A;2023-06-08

4. Functional groups and vertical strain regulate the electronic properties of Nb2NT2/MoTe2 heterojunction;Materials Science and Engineering: B;2023-02

5. Crystal‐Phase Controlled Epitaxial Growth of NbN _x Superconductors on Wide‐Bandgap AlN Semiconductors;Advanced Materials Interfaces;2022-09-21

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