A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy

Published:2013-12-01 Issue:12 Volume:6 Page:125502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Lee Moonsang,Mikulik Dmitry,Kim Joosung,Tak Youngjo,Kim Junyoun,Shim Munbo,Park Youngsoo,Chung Uin,Yoon Euijoon,Park Sungsoo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=12/a=125502/pdf

Reference27 articles.

1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

2. Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides

3. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

4. Lattice-matched HfN buffer layers for epitaxy of GaN on Si

5. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Substrate Morphology and Structural Defects in Freestanding Gallium Nitride on the Breakdown Characteristics of GaN-on-GaN Vertical Diodes;Journal of Electronic Materials;2023-03-05

2. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing;Applied Physics A;2021-08-10

3. A Laterally Overgrown GaN Thin Film Epitaxially Separated from but Physically Attached to an SiO2-Patterned Sapphire Substrate;Crystal Growth & Design;2020-07-31

4. Orbital shadowing property on chain transitive sets for generic diffeomorphisms;Acta Universitatis Sapientiae, Mathematica;2020-07-01

5. Hydride vapor phase epitaxy for gallium nitride substrate;Journal of Semiconductors;2019-10-01

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