Electrical Properties of Gallium Arsenide-Insulator Interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/13/i=S2/a=441/pdf
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices;Solid-State Electronics;2007-08
2. Interfacial Constraints on III-V Compound MIS Devices;Physics and Chemistry of III-V Compound Semiconductor Interfaces;1985
3. On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states;Thin Solid Films;1983-01
4. InGaAsPn‐channel inversion‐mode metal‐insulator‐semiconductor field‐effect transistor with low interface state density;Journal of Applied Physics;1981-10
5. The characterization of a proposed model GaAs/anodic oxide interface;Journal of Electronic Materials;1980-07
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