Photosensitive polysiloxane passivation fabricated at low temperature for highly reliable amorphous InGaZnO thin-film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=9/a=090306/pdf
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1. The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
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3. Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers
4. 76.2: Development of Highly Stable a-IGZO TFT with TiOx as a Passivation Layer for Active-Matrix Display
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