Electrical evidence of multiple-filament formation in tantalum oxide-based resistive switching memory via a novel device structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=12/a=124201/pdf
Reference31 articles.
1. Switching mechanism in resistive random access memory by first-principles calculation using practical model based on experimental results
2. Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
3. Resistive switching phenomena: A review of statistical physics approaches
4. Forming-free electrochemical metallization resistive memory devices based on nanoporous TiO x N y thin film
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