Influence of Dry Recess Process on Enhancement-Mode GaN Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

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Influence of Dry Recess Process on Enhancement-Mode GaN Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2013-01-01 Issue:1S Volume:52 Page:01AG02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Qingpeng,Tamai Kentaro,Miyashita Takahiro,Motoyama Shin-ichi,Wang Dejun,Ao Jin-Ping,Ohno Yasuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. First AlGaN/GaN MOSFET with photoanodic gate dielectric

2. A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

3. GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2Gate Insulator on AlGaN/GaN Heterostructure

4. GaN MOSFET with a gate SiO2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition

5. Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs;Applied Surface Science;2021-04

2. Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment;IEEE Transactions on Electron Devices;2021-03

3. Impact of dislocation pits on device performances and interface quality degradation for E-mode recessed-gate Al2O3/GaN MOSFETs;Journal of Alloys and Compounds;2021-02

4. Normally-Off GaN Power Device Based on Stack AlGaN Barrier Structure and P-Type NiO Gate Electrode;Materials Science Forum;2020-11

5. Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer;Journal of Physics D: Applied Physics;2020-07-27

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