Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition

Published:2013-08-01 Issue:8S Volume:52 Page:08JN12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamamoto Taiki,Sazawa Hiroyuki,Nishikawa Naohiro,Kiuchi Maki,Ide Toshihide,Shimizu Mitsuaki,Inoue Takayuki,Hata Masahiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure

2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

3. Microwave AlGaN/GaN HFETs

4. Pressure Induced Deep Gap State of Oxygen in GaN

5. Identification of Si and O donors in hydride-vapor-phase epitaxial GaN

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy;IEEE Transactions on Electron Devices;2024-05

2. (Ga,Mn)N—Epitaxial growth, structural, and magnetic characterization—Tutorial;Journal of Applied Physics;2024-02-20

3. Ultra-high pressure annealing of Mn-implanted HVPE-GaN;Journal of Alloys and Compounds;2023-12

4. First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD;Crystals;2023-10-01

5. High resistive buffer layers by Fermi level engineering;Journal of Applied Physics;2023-07-11

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