Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy

Published:2013-11-01 Issue:11S Volume:52 Page:11NG03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Ji Young,Lee Gang Seok,Jung Se-Gyo,Park Min Ah,Shin Min Jeong,Yi Sam Nyung,Yang Min,Ahn Hyung Soo,Yu Young Moon,Kim Suck-Whan,Lee Hyo Suk,Kang Hee Shin,Jeon Hun Soo,Sawaki Nobuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. GaN/AlGaN high electron mobility transistors with f of 110 GHz

2. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

3. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

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