High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells-Reference-Cited by-同舟云学术

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High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells

Published:2016-12-21 Issue:1 Volume:10 Page:011004
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Muhtadi Sakib,Hwang Seong Mo,Coleman Antwon L.,Lunev Alexander,Asif Fatima,Chava V. S. N.,Chandrashekhar M. V. S.,Khan Asif

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=1/a=011004/pdf

Reference23 articles.

1. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

2. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

3. Low-Intensity Ultraviolet Photodetectors Based on AlGaN

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3. Miniaturized AlGaN‐Based Deep‐Ultraviolet Light‐Emitting and Detecting Diode with Superior Light‐Responsive Characteristics;Advanced Optical Materials;2024-05-21

4. Multi-effect coupling enhanced self-powered heterojunction ultraviolet photodetector with ultra-low detection limit;Materials Today;2024-05

5. Dual‐Functional Triangular‐Shape Micro‐Size Light‐Emitting and Detecting Diode for On‐Chip Optical Communication in the Deep Ultraviolet Band;Laser & Photonics Reviews;2024-04-05

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