Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=11/a=111002/pdf
Reference22 articles.
1. Heavy doping effects in Mg-doped GaN
2. Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
3. A two-dimensional optical fibre microphone array with matrix-style data readout
4. In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates
5. First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
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