Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor–one-resistor resistance random access memory-Reference-Cited by-同舟云学术

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Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor–one-resistor resistance random access memory

Published:2017-04-06 Issue:5 Volume:10 Page:054101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wu Cheng-Hsien,Chang Ting-Chang,Tsai Tsung-Ming,Chang Kuan-Chang,Chu Tian-Jian,Pan Chih-Hung,Su Yu-Ting,Chen Po-Hsun,Lin Shih-Kai,Hu Shih-Jie,Sze Simon M.

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=5/a=054101/pdf

Reference33 articles.

1. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

2. Developments in nanocrystal memory

3. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

4. Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structure

5. Resistance random access memory

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1. Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique;physica status solidi (a);2023-09-07

2. Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films;Advanced Electronic Materials;2022-07-14

3. Investigation of abnormal forming process current caused by copper diffusion in Cu/GeSO/TiN resistance random access memory;Materials Chemistry and Physics;2021-07

4. A Robust and Low‐Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments;Small;2020-10-14

5. Nanoimaging of Electrical Failure in VO2 Resistive-Switching Nanodevices;ACS Applied Electronic Materials;2020-08-01

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