Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750 V
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=12/a=121002/pdf
Reference24 articles.
1. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
2. A new vertical GaN SBD employing in-situ metallic gallium ohmic contact
3. Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates
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