Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/12/i=2/a=021003/pdf
Reference40 articles.
1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
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