Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/aafded/pdf
Reference30 articles.
1. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
2. AlGaN/GaN HEMT structures on ammono bulk GaN substrate
3. Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates
4. Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates
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