Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunneling FET by UV-O3 treatment
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab2199/pdf
Reference32 articles.
1. The fundamental limit on binary switching energy for terascale integration (TSI)
2. Tunnel field-effect transistors as energy-efficient electronic switches
3. Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
4. 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
5. Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment
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