Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation-Reference-Cited by-同舟云学术

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Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation

Published:2011-04-01 Issue:4S Volume:50 Page:04DF06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Grace Huiqi,Wong Ting-Chong,Wang Xin-cai,Zheng Hong-Yu,Chan Taw-Kuei,Osipowicz Thomas,Foo Yong-Lim,Tripathy Sudhiranjan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Effects of KrF excimer laser irradiation on metal contacts to n-type and p-type GaN

2. Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off

3. Optical and Electrical Characteristics of CO2-Laser-Treated Mg-Doped GaN Film

4. Activation of Mg Acceptor in GaN : Mg with Pulsed KrF (248 nm) Excimer Laser Irradiation

5. Optical patterning of GaN films

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2. Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation;Symmetry;2021-10-14

3. Morphology, structure and photoelectric properties of F-doped SnO2 films under flexible PET mask reinforced laser annealing;Materials Science in Semiconductor Processing;2021-08

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