Mn2O3Slurry Reuse by Circulation Achieving High Constant Removal Rate-Reference-Cited by-同舟云学术

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Mn2O3Slurry Reuse by Circulation Achieving High Constant Removal Rate

Published:2012-04-01 Issue:4S Volume:51 Page:04DB07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kishii Sadahiro,Nakamura Ko,Hanawa Kenzo,Watanabe Satoru,Arimoto Yoshihiro,Kurokawa Syuhei,Doi Toshiro K.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference41 articles.

1. Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing

2. Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections

3. Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Catalyzed chemical polishing of SiO2 glasses in pure water;Review of Scientific Instruments;2019-04

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