Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide-Reference-Cited by-同舟云学术

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Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide

Published:2012-02-01 Issue:2R Volume:51 Page:021201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kato Kiyoshi,Shionoiri Yutaka,Sekine Yusuke,Furutani Kazuma,Hatano Takehisa,Aoki Taro,Sasaki Miyuki,Tomatsu Hiroyuki,Koyama Jun,Yamazaki Sunpei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference36 articles.

1. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C

2. Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

3. The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C

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2. The Impact of IGZO Channel Composition on DRAM Transistor Performance;IEEE Transactions on Electron Devices;2023-09

3. Cell Structure and Process Integration of a Novel 2T0C Technology for High-Density Dram Application;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

4. High Performance Schottky Barrier TFTs With Indium–Gallium–Zinc-Oxide/Mo Schottky Junction;IEEE Electron Device Letters;2023-04

5. Recent progress of the p-type oxide thin films for transistor applications: Nickel oxide, Tin oxide, and Copper oxide;Ceramist;2023-03-31

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