Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference50 articles.
1. Structural and electrical properties of Ta and Ta nitrides deposited by chemical vapour deposition
2. Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization
3. Comparison of the diffusion barrier properties of chemical‐vapor‐deposited TaN and sputtered TaN between Cu and Si
4. Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
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