Fast Formation of Conductive Material by Simultaneous Chemical Process for Infilling Through-Silicon Via-Reference-Cited by-同舟云学术

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Fast Formation of Conductive Material by Simultaneous Chemical Process for Infilling Through-Silicon Via

Published:2012-06-01 Issue:6S Volume:51 Page:06FG11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawakita Jin,Chikyow Toyohiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. Current Status of Research and Development for Three-Dimensional Chip Stack Technology

2. Trends and opportunities of system-in-a-package and three-dimensional integration

3. Through-Silicon Via (TSV)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adhesion of silver/polypyrrole nanocomposite coating to a fluoropolymer substrate;Applied Surface Science;2016-10

2. Reaction factors for photo-electrochemical deposition of metal silver on polypyrrole as conducting polymer;Electrochimica Acta;2015-11

3. Diffusion Barrier and Adhesion Properties of SiOxNy and SiOx Layers between Ag/Polypyrrole Composites and Si Substrates;ACS Applied Materials & Interfaces;2014-06-06

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