Two-dimensional analytical model for hetero-junction double-gate tunnel field-effect transistor with a stacked gate-oxide structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=5/a=054201/pdf
Reference29 articles.
1. A new analytical threshold voltage model of cylindrical gate tunnel FET (CG-TFET)
2. Compact Analytical Drain Current Model of Gate-All-Around Nanowire Tunneling FET
3. A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance
4. GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths
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