Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition-Reference-Cited by-同舟云学术

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Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Published:2017-03-01 Issue:4S Volume:56 Page:04CG03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cui Guodong,Han Dedong,Dong Junchen,Cong Yingying,Zhang Xiaomi,Li Huijin,Yu Wen,Zhang Shengdong,Zhang Xing,Wang Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CG03/pdf

Reference29 articles.

1. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. 35.3: Distinguished Paper: A Novel Self-Aligned Top-Gate Oxide TFT for AM-OLED Displays

4. ZnO-based transparent thin-film transistors

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2. Plasma-enhanced atomic-layer deposition of active layers of nanolaminated (InO_x)_n(GaZnO_y)_m for thin-film transistors;Journal of Materials Chemistry C;2022

3. The structure, the electrical properties and thermal stability of ZnO/SnO2 thin films;THE VIII INTERNATIONAL YOUNG RESEARCHERS’ CONFERENCE – PHYSICS, TECHNOLOGY, INNOVATIONS (PTI-2021);2022

4. High energy (MeV) ion beam induced modifications in Al2O3-ZnO multilayers thin films grown by ALD and enhancement in photoluminescence, optical and structural properties;Vacuum;2021-10

5. ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis;Journal of the Australian Ceramic Society;2021-08-12

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