Defect generation in electronic devices under plasma exposure: Plasma-induced damage
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=6S2/a=06HA01/pdf
Reference233 articles.
1. A new "Hot electron" triode structure with semiconductor-metal emitter
2. Invention of the integrated circuit
3. Design of ion-implanted MOSFET's with very small physical dimensions
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