Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on $(\bar{2}01)$ β-Ga2O3
Author:
Funder
Japan Society for the Promotion of Science
Kyushu University
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=9/a=091101/pdf
Reference32 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
3. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
4. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
5. Current status of Ga2O3power devices
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