Bias temperature instability in tunnel field-effect transistors-Reference-Cited by-同舟云学术

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Bias temperature instability in tunnel field-effect transistors

Published:2017-03-15 Issue:4S Volume:56 Page:04CA04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizubayashi Wataru,Mori Takahiro,Fukuda Koichi,Ishikawa Yuki,Morita Yukinori,Migita Shinji,Ota Hiroyuki,Liu Yongxun,O’uchi Shinichi,Tsukada Junichi,Yamauchi Hiromi,Matsukawa Takashi,Masahara Meishoku,Endo Kazuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CA04/pdf

Reference32 articles.

1. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

2. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

3. Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance

4. Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of Negative Bias Temperature Instability Due to Interface and Oxide Trapped Charges in Gate-All-Around TFET Devices;IEEE Transactions on Nanotechnology;2023

2. Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses;IEEE Access;2021

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