Resistive switching properties of polycrystalline HfOxNyfilms by plasma-enhanced atomic layer deposition-Reference-Cited by-同舟云学术

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Resistive switching properties of polycrystalline HfOxNyfilms by plasma-enhanced atomic layer deposition

Published:2017-04-06 Issue:5 Volume:56 Page:050304
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yu Jue,Huang Wei,Lu Chao,Lin Guangyang,Li Cheng,Chen Songyan,Wang Jianyuan,Xu Jianfang,Liu Chunli,Lai Hongkai

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=5/a=050304/pdf

Reference22 articles.

1. Nanoionics-based resistive switching memories

2. Complementary resistive switching in tantalum oxide-based resistive memory devices

3. Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

4. Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

5. Effect of Ion Diffusion on Switching Voltage of Solid-Electrolyte Nanometer Switch

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1. Resistive switching behaviour in ZrO2-CNT nanocomposite film;Applied Physics A;2024-07-22

2. Phase-dependent memristive behaviors in FAPbI3-based memristors;Materials Today Communications;2022-12

3. Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices;Solid-State Electronics;2022-08

4. Investigating Electronic, Optical, and Phononic Properties of Bulk γ-M₂ON₂ and β-M₇O₈N₄ (M = Hf and Zr) Insulators Using Density Functional Theory;ACS Omega;2022-03-07

5. Review on role of nanoscale HfO2 switching material in resistive random access memory device;Emergent Materials;2022-02-28

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