Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4S/a=04FG12/pdf
Reference29 articles.
1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
2. Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications
3. Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si
4. The Improvement of DC Performance in AlGaN–GaN HEFTs With Isoelectronic Al-Doped Channels
5. GaN Power Transistors on Si Substrates for Switching Applications
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1. High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction field-effect transistors with a dual AlN/AlGaInN barrier layer;Japanese Journal of Applied Physics;2022-02-16
2. Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer;Materials Science in Semiconductor Processing;2021-10
3. Two-dimensional WS2/MoS2 heterostructures: properties and applications;Nanoscale;2021
4. Metalorganic Chemical Vapor Deposition of over 150‐nm‐Thick Quaternary AlGaInN Epitaxial Films near Alloy Composition Lattice‐Matching to GaN on Sapphire and Their Structural and Optical Characterization;physica status solidi (a);2019-10-21
5. High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator;Journal of Vacuum Science & Technology B;2019-07
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