Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography-Reference-Cited by-同舟云学术

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Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe Tomography

Published:2013-04-01 Issue:4 Volume:6 Page:046502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Inoue Koji,Takamizawa Hisashi,Shimizu Yasuo,Yano Fumiko,Toyama Takeshi,Nishida Akio,Mogami Tohru,Kitamoto Katsuyuki,Miyagi Takahiro,Kato Jun,Akahori Seishi,Okada Noriyuki,Kato Mikio,Uchida Hiroshi,Nagai Yasuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=4/a=046502/pdf

Reference19 articles.

1. Atom probe tomography

2. Atom Probe Tomography 2012

3. Dopant distributions in n-MOSFET structure observed by atom probe tomography

4. Atom-probe for FinFET dopant characterization

5. Toward atom probe tomography of microelectronic devices

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3. Atom-Probe Tomography;Springer Handbook of Microscopy;2019

4. Issues of Three-Dimensional Nanometer Scale Analysis for Advanced Semiconductor Devices;Vacuum and Surface Science;2018-12-10

5. Using Atom-Probe Tomography to UnderstandZnO∶Al/SiO2/SiSchottky Diodes;Physical Review Applied;2016-09-26

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