Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy-Reference-Cited by-同舟云学术

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Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy

Published:2013-04-01 Issue:4 Volume:6 Page:042404
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Sanson Andrea,Napolitani Enrico,Giarola Marco,Impellizzeri Giuliana,Privitera Vittorio,Mariotto Gino,Carnera Alberto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=4/a=042404/pdf

Reference23 articles.

1. Spreading resistance roadmap towards and beyond the 70 nm technology node

2. Micro-Raman spectroscopy for characterization of semiconductor devices

3. Temperature distribution in Si-MOSFETs studied by micro-Raman spectroscopy

4. Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. p-type doping of Ge by Al ion implantation and pulsed laser melting;Applied Surface Science;2020-04

2. Application of slope-polishing technique for depth profile of selenized CIGS by micro-Raman spectroscopy;Applied Surface Science;2016-08

3. Origin of additional broad peaks in Raman spectra from thin germanium-rich silicon–germanium films;Applied Physics Express;2016-06-01

4. High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD;RSC Advances;2016

5. A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge;Journal of Raman Spectroscopy;2014-01-16

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