Invited: Growth and Doping Kinetics in Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Invited: Growth and Doping Kinetics in Molecular Beam Epitaxy

Published:1977-01-01 Issue:S1 Volume:16 Page:17
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Joyce B. A.,Foxon C. T.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/16/i=S1/a=17/pdf

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface segregation mechanism during two‐dimensional epitaxial growth: The case of dopants in Si and GaAs molecular‐beam epitaxy;Journal of Applied Physics;1989-04

2. Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular‐beam epitaxy;Journal of Applied Physics;1986-04-15

3. Molecular Beam Epitaxy And Selective MBE Deposition of GaAs Device Structures;Erosion and Growth of Solids Stimulated by Atom and Ion Beams;1986

4. Origin of oval defects in GaAs layers grown by molecular beam epitaxy;Journal of Crystal Growth;1985-10

5. Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques;Applications of Surface Science;1985-05

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