Abstract
Abstract
An evident issue in performing GaN growth along the c-direction is the generation of V-shaped pits on its surface. Here, we investigated the transition of the angle of facets forming a V-shaped pit via three-photon excitation photoluminescence (3PPL). The intermittent doping of Ge was introduced to GaN growth to observe the growth front. The size of the V-shaped pit composed of {
10
1
¯
2
} facets decreased along the growth direction, whereas that composed of {
10
1
¯
1
} facets, increased. Furthermore, planar growths of c-GaN and semipolar GaN having various surface orientations revealed that the V-shaped pit composed of {
10
1
¯
2
} was likely to annihilate rather than that of {
10
1
¯
1
} under the growth condition of N2 carrier gas, which coincides with the result of 3PPL.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
4 articles.
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