Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=1/a=014002/pdf
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1. An injection efficiency model to characterize the injection capability and turn-off speed for >10kV 4H-SiC IGBTs
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3. A High-Temperature SiC Three-Phase AC–DC Converter Design for >$100 ^{\circ}$C Ambient Temperature
4. Simulation and experimental study of 3-step junction termination extension for high-voltage 4H-SiC gate turn-off thyristors
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