Epitaxial AlN on c-plane sapphire by plasma nitriding
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab07a0/pdf
Reference48 articles.
1. Electronic Structure of Diamond, Silicon Carbide, and the Group-III Nitrides
2. Intrinsic stress in A1N prepared by dual-ion-beam sputtering
3. Laser‐induced chemical vapor deposition of AlN films
4. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
5. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
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2. Aluminum surface nitriding by an atmospheric-pressure non-thermal plasma technique;Japanese Journal of Applied Physics;2022-01-24
3. Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2;Coatings;2021-10-14
4. Oriented Si3N4 crystallites formed by plasma nitriding of SiO2/Si (111) substrate;Surface and Coatings Technology;2020-08
5. Heteroepitaxial growth and microwave plasma annealing of DC reactive sputtering deposited TiZrN film on Si (100);Surface and Coatings Technology;2020-07
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