Theoretical investigations on the structural stability and miscibility in BAlN and BGaN alloys: bond-order interatomic potential calculations-Reference-Cited by-同舟云学术

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Theoretical investigations on the structural stability and miscibility in BAlN and BGaN alloys: bond-order interatomic potential calculations

Published:2019-05-14 Issue:SC Volume:58 Page:SCCB21
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hasegawa Yuya,Akiyama Toru,Pradipto Abdul-Muizz,Nakamura Kohji,Ito Tomonori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SC/a=SCCB21/pdf

Reference36 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. Solid-State Light Sources Getting Smart

3. Excitonic emission of BGaN grown on (0001) 6H–SiC by metal-organic vapor-phase epitaxy

4. MOCVD growth of GaBN on 6H-SiC (0001) substrates

5. Growth of AlBN solid solutions by organometallic vapor-phase epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial AlBN/β‐Nb₂N Ferroelectric/Superconductor Heterostructures;physica status solidi (RRL) – Rapid Research Letters;2024-07-25

2. An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions;Applied Physics Letters;2023-07-03

3. Natural band alignment of BAlN and BGaN alloys;Journal of Physics D: Applied Physics;2022-09-20

4. Morphology and carrier mobility of high-B-content B_xAl_1−xN ternary alloys from an ab initio global search;Nanoscale;2022

5. Deep Ultraviolet Edge Emitting Laser Diode Using Novel Boron Gallium Nitride over Sapphire Substrate: Simulation Study;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

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