Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SC/a=SCCD02/pdf
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1. Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier
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