Ferroelectric HfO2 formation by annealing of a HfO2/Hf/HfO2/Si(100) stacked structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SB/a=SBBB08/pdf
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1. Current Status of Nonvolatile Semiconductor Memory Technology
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1. The Effect of Inter Layers on the Ferroelectric Undoped HfO<sub>2</sub> Formation;IEICE Transactions on Electronics;2022-10-01
2. Atomic Layer Deposition Plasma-Based Undoped-HfO2 Ferroelectric FETs for Non-Volatile Memory;IEEE Electron Device Letters;2021-08
3. Intrinsic Defect Limit to the Growth of Orthorhombic HfO 2 and (Hf,Zr)O 2 with Strong Ferroelectricity: First‐Principles Insights;Advanced Functional Materials;2021-07-20
4. Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO₂ Formation for MFSFET With Pt Gate Electrode;IEEE Transactions on Electron Devices;2021-05
5. Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes;IEICE Transactions on Electronics;2020-06-01
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