The morphologies of GaN crystals grown on Ga- and N-face of HVPE seeds by the Na flux liquid phase epitaxial method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab1127/pdf
Reference35 articles.
1. Preparation of GaN Single Crystals Using a Na Flux
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. III–nitrides: Growth, characterization, and properties
4. Luminescence properties of defects in GaN
5. Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy
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1. The Growth Pits Filling Mechanism of CdZnTe Epitaxial Film Prepared by Close-Spaced Sublimation Based on the First-Principles Calculation;Journal of Crystal Growth;2023-09
2. Dislocation evolution along the growth direction of 2-inch GaN crystal grown by Na-flux LPE;Materials Science in Semiconductor Processing;2021-05
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