Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching

Author:

Koketsu Hidenori,Hatayama Tomoaki,Yano Hiroshi,Fuyuki Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study of SiC trench MOSFET switching performance;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17

2. 4H-SiC Tapered-Gate MOSFET with Low ON-resistance and Hight Current Density;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

3. V-groove trench gate SiC MOSFET with a double reduced surface field junction termination extensions structure;Japanese Journal of Applied Physics;2019-03-04

4. Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (0$\bar{3}$3$\bar{8}$) interfaces;Japanese Journal of Applied Physics;2019-02-22

5. Dry Etching of High Aspect Ratio 4H-SiC Microstructures;ECS Journal of Solid State Science and Technology;2017

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