InGaN/GaN Multiple Quantum Well Solar Cells with Good Open-Circuit Voltage and Concentrator Action-Reference-Cited by-同舟云学术

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InGaN/GaN Multiple Quantum Well Solar Cells with Good Open-Circuit Voltage and Concentrator Action

Published:2012-09-01 Issue:9R Volume:51 Page:092301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Li Xue-Fei,Zheng Xin-He,Zhang Dong-Yan,Wu Yuan-Yuan,Shen Xiao-Ming,Wang Jian-Feng,Yang Hui

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. Unusual properties of the fundamental band gap of InN

2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

3. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

4. Electrical transport in p-GaN, n-InN and n-InGaN

5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric-field driven photoluminescence probe of photoelectric conversion in InGaN-based photovoltaics;Optics Express;2018-05-18

2. Efficiency enhancement for resonant-cavity-enhanced InGaN/GaN multiple quantum well solar cells;Vacuum;2017-06

3. Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration;Applied Physics A;2016-10

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