Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference27 articles.
1. What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?
2. Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks
3. Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates
4. Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate
5. Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal–Oxide–Silicon Submount
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